A Facile and Universal Top‐Down Method for Preparation of Monodisperse Transition‐Metal Dichalcogenide Nanodots

Despite unique properties of layered transition‐metal dichalcogenide (TMD) nanosheets, there is still lack of a facile and general strategy for the preparation of TMD nanodots (NDs). Reported herein is the preparation of a series of TMD NDs, including TMD quantum dots (e.g. MoS₂, WS₂, ReS₂, TaS₂, MoSe₂ and WSe₂) and NbSe₂ NDs, from their bulk crystals by using a combination of grinding and sonication techniques. These NDs could be easily separated from the N‐methyl‐2‐pyrrolidone when post‐treated with n‐hexane and then chloroform. All the TMD NDs with sizes of less than 10 nm show a narrow size distribution with high dispersity in solution. As a proof‐of‐concept application, memory devices using TMD NDs, for example, MoSe₂, WS₂, or NbSe₂, mixed with polyvinylpyrrolidone as active layers, have been fabricated, which exhibit a nonvolatile write‐once‐read‐many behavior. These high‐quality TMD NDs should have various applications in optoelectronics, solar cells, catalysis, and biomedicine.     

Turbulent boundary layer manipulation by outer-layer devices

A turbulent boundary layer manipulated by outer-layer devices has been studied. Experiments have been conducted in the 0.70 by 0.50 m² low speed wind tunnel of the Modesto Panetti Aeronautical Laboratory of the Politecnico di Torino. Mean values and turbulent quantities measured in the natural and manipulated boundary layers are shown for comparison. The mechanisms to explain the observed skin friction and turbulence reduction are discussed. The manipulator wake effect, consisting in decoupling the wall-region from the boundary layer outer-region, is stressed in the present results.

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Sommario Viene studiato uno strato limite turbolento manipolato, utilizzando la tecnica degli outer-layer devices. Gli esperimenti sono stati condotti nella galleria del vento 0.70×0.50 m² del Laboratorio di Aeronautica Modesto Panetti del Politecnico di Torino. Sono confrontati risultati relativi ai casi di flusso non manipolato e manipolato. Vengono discussi i meccanismi che conducono alla riduzione dello sforzo di attrito a parete e delle quantità turbolente; in particolare si punta l'attenzione sull'effetto decorrelante della scia del manipolatore.

     

双原子正方晶格光子晶体边界模式的光传输特性

利用平面波展开法,发现双原子正方晶格光子晶体中ΓM方向边界面存在着快慢两类边界模式,并且通过计算色散关系和电场分布研究了边界参量对这两类边界模式传输特性的影响.依据两种模式的色散关系,计算了群指数和群速度色散参量,结果表明边界参量的变化对第一类边界模式传输特性的影响较小,该模式的平均群指数始终维持在5.0左右;第二类边界模式与第一类模式明显不同,边界参量的变化能够有效地影响到这种模式的传输特性,该模式的最大平均群指数可达178左右.利用时域有限差分法记录了不同时刻电场强度在边界附近的分布及监测点处的电场幅度变化情况,结果表明,两类模式都能够被限制在边界附近并向前传播,时域有限差分法得到的群速度与平面波展开法的结果完全吻合.     

APU故障智能诊断系统设计

针对高旋环境下测试困难、测量精度低这一问题,提出了一种能在高旋环境下实现轴向减速装置,以达到稳定的良好的测试环境。该装置通过驱动仓内大量程陀螺仪测得的转速反馈给控制系统,控制系统输出控制信号来控制伺服电机,同时电机捷联内筒仓,使其相对外部转动方向反向旋转,实现轴向减速。实验结果表明,该装置可在高旋弹药飞行过程中提供稳定测试环境,从而得到更精准的姿态解算结果,为高旋环境下的测试提供了新的思路,具有广阔的应用前景。     

铜锌锡硫薄膜材料及其器件应用研究进展

铜锌锡硫薄膜材料组成元素储量丰富, 环境友好, 成本低廉, 成为最具前景的薄膜材料之一. 目前, Cu₂ZnSn(S, Se)₄ (CZTSSe)薄膜太阳电池的最高转换效率已经达到12.6%. 本文总结了Cu₂ZnSnS₄ (CZTS)的发展历史, 依次介绍了CZTS薄膜材料的结构特性、光学特性、电学特性、界面特性和Na对CZTS 薄膜的影响, 详细介绍了CZTS薄膜的制备方法及器件应用的最新研究进展, 总结了目前CZTS薄膜太阳电池发展中存在的问题, 展望了今后的研究方向.     

不同退火方式对Ni/SiC接触界面性质的影响

采用快速热退火(rapid thermal annealing, RTA)法和脉冲激光辐照退火(laser spark annealing, LSA)法, 在n型4H-SiC的Si面制备出Ni电极欧姆接触. 经传输线法测得RTA样品与LSA样品的比接触电阻分别为5.2×10^-4 Ω·cm², 1.8× 10^-4 Ω·cm². 使用扫描电子显微镜、原子力显微镜、透射电子显微镜、拉曼光谱等表征手段, 比较了两种退火方式对电极表面形貌、电极/衬底截面形貌和元素成分分布、SiC衬底近表层碳团簇微结构的影响. 结果表明, 相比于RTA, LSA法制备出的欧姆接触在电极表面形貌、界面形貌、电极层组分均匀性等方面都具有明显优势, 有望使LSA成为一种非常有潜力的制备欧姆接触的退火处理方法.     

电荷耦合器件在质子辐照下的粒子输运仿真与效应分析

应用蒙特卡洛方法计算了质子在科学级电荷耦合器件(charge-coupled device, CCD) 结构中的能量沉积, 并结合该CCD的质子辐照试验及退火试验数据, 分析了器件的辐射损伤机理. 仿真计算体硅内沉积的位移损伤剂量和栅氧化层的电离损伤剂量, 辐照与退火试验过程中主要考察暗信号、电荷转移效率两个参数的变化规律. 研究结果显示, 暗信号和电荷转移效率的变化规律与位移、电离损伤剂量一致; 退火后暗信号大幅度降低, 辐照导致的表面暗信号增加占总暗信号增加的比例至少为80%; 退火后电荷转移效率恢复较小, 电荷转移效率降低的原因主要为体缺陷. 通过总结试验规律, 推导出了电荷转移效率退化程度的预估公式及其损伤因子k_damage.     

Scanning probe microscopy investigations of the electrical properties of chemical vapor deposited graphene grown on a 6H-SiC substrate

Sublimated graphene grown on SiC is an attractive material for scientific investigations. Nevertheless the self limiting process on the Si face and its sensitivity to the surface quality of the SiC substrates may be unfavourable for later microelectronic processes. On the other hand, chemical vapor deposited (CVD) graphene does not posses such disadvantages, so further experimental investigation is needed. In this paper CVD grown graphene on 6H-SiC (0 0 0 1) substrate was investigated using scanning probe microscopy (SPM). Electrical properties of graphene were characterized with the use of: scanning tunnelling microscopy, conductive atomic force microscopy (C-AFM) with locally performed C-AFM current–voltage measurements and Kelvin probe force microscopy (KPFM). Based on the contact potential difference data from the KPFM measurements, the work function of graphene was estimated. We observed conductance variations not only on structural edges, existing surface corrugations or accidental bilayers, but also on a flat graphene surface.     

SiC粒子非均布引起铝基复合材料的损伤分析

 根据电镜断面考察结果，以Gurson模型为本构方程的有限单元 法对包体模型及三维非均匀模型进行了详细分析. 为了评价应力-应变 关系及损伤的主要因素，考虑了基体中SiC粒子的体积率和径比的非均 匀分布. 其结果表明，用这种非均匀模型能很好地仿真铝基体在大量塑 性变形之后所发生的韧窝破坏过程. SiC粒子体积率、径比及其位置的 非均匀性，对局部和整体损伤过程与应力-应变关系的影响相当大. 当 Sic粒子径比为1.0，并在基体中均匀分布时，断裂应变会大幅度增大.     

无压浸渗SiC/Al复合材料的摩擦磨损性能研究

采用无压浸渗法制备不同碳化硅粒度和体积分数的SiC/Al复合材料,利用销-盘摩擦磨损试验机考察了碳化硅的粒度和体积分数等对SiC/Al复合材料干摩擦磨损性能的影响,采用扫描电子显微镜观察磨损表面形貌并分析其磨损机理.结果表明,SiC/Al复合材料的磨损率随碳化硅体积分数增加而降低.与灰铸铁配副时,材料的摩擦系数与磨损率明显依赖于碳化硅粒度,二者均随碳化硅粒度增加而降低.复合材料的磨损机制以碳化硅颗粒的碎裂、脱落和表面犁沟为主要特征.